Development of ZnTe:Cu contacted CdTe solar cells
With an ideal band gap about 1.45 eV and a large absorption coefficient (>104 cm-1) CdTe has emerged as the leading thin film photovoltaic (PV) technology. However an ongoing challenge is forming a high quality ohmic contact with CdTe, which reflects its low carrier concentration and high work function (5.7 eV). To overcome this problem, ZnTe is used as the buffer layer because it has good valence band alignment with CdTe and can be easily doped to form a quasi-ohmic contact. Copper is commonly used to degenerately dope this layer, which narrows the barrier width and permits electron tunneling, ...
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