Show simple item record

dc.contributor.advisorAraujo, Carlos Paz de
dc.contributor.authorShoemaker, Seth Christopher
dc.contributor.committeememberKalkur, T. S.
dc.contributor.committeememberHeather, Song
dc.date.accessioned2019-05-10T17:52:03Z
dc.date.available2019-05-10T17:52:03Z
dc.date.submitted2019-05
dc.descriptionIncludes bibliographical references.
dc.description.abstractThis thesis reviews the current state of technologies used in non-volatile memory and the limitations these technologies create for memory and CPU systems. A detailed review and analysis of the physics found in electron-electron interactions in doped transition metal oxides is then provided. This analysis serves as the basis for analyzing CeRAM; a technology that relies on electron-electron interactions that has the potential to serve as a replacement for current memory systems
dc.identifierShoemaker_uccs_0892N_10459.pdf
dc.identifier.urihttps://hdl.handle.net/10976/167093
dc.languageEnglish
dc.publisherUniversity of Colorado Colorado Springs. Kraemer Family Library
dc.rightsCopyright of the original work is retained by the author.
dc.subjectMemory
dc.subjectCeRAM
dc.titlePHYSICS OF CARBONYL DOPED TRANSITION METAL OXIDES FOR A NON-VOLATILE MEMORY
dc.typeThesis
thesis.degree.disciplineCollege of Engineering and Applied Science–Electrical Engineering
thesis.degree.grantorUniversity of Colorado Colorado Springs
thesis.degree.levelMasters


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record