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Efficient room-temperature continuous-wave AlGaInP/AlGaAs visible (670 nm) vertical-cavity surface-emitting laser diodes

Date

1994

Authors

Malloy, K. J., author
Figiel, J. J., author
Lear, Kevin L., author
Lott, J. A., author
Choquette, Kent D., author
Schneider, Richard P., author
IEEE, publisher

Journal Title

Journal ISSN

Volume Title

Abstract

Significant improvement in the performance of AlGaInP/AlGaAs visible vertical-cavity surface-emitting laser diodes has been achieved in gain-guided planar-geometry devices utilizing proton implants to define the current injection path. Threshold currents as low as 1.25 mA were measured on 10 μm-diameter devices, with maximum power output of 0.33 mW from larger devices. Continuous-wave (cw) lasing was achieved at temperatures as high as 45°C. The improved diode performance is attributed to better lateral heat-sinking and reduced parasitic heat generation afforded by the planar device structure, relative to previously-reported air-post structures. This work represents the first realization of efficient room-temperature operation of AlGaInP-based visible VCSEL diodes.

Description

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Subject

III-V semiconductors
aluminium compounds
gallium arsenide
indium compounds
laser cavity resonators
semiconductor lasers

Citation

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