Electrical and optical characteristics of AlAsSb/GaAsSb distributed Bragg reflectors for surface emitting lasers
Date
1995
Authors
Chu, S. N. G., author
Lear, Kevin L., author
Klem, J. F., author
Hafich, M. J., author
Blum, O., author
American Institute of Physics, publisher
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Abstract
We demonstrate an undoped 20 1/2 pair AlAsSb/GaAsSb distributed Bragg reflector (DBR) grown lattice matched to an InP substrate by molecular beam epitaxy. Reflectivity measurements indicate a stop band centered at 1.78 µm with a maximum reflectivity exceeding 99%. We also measure current-voltage characteristics in a similar 10 1/2 period p-type DBR and find that a current density of 1 kA/cm2 produces a 2.5 V drop. Hole mobilities and doping concentrations in AlAsSb and GaAsSb are also reported.
Description
Rights Access
Subject
aluminium arsenides
aluminium compounds
antimonides
Bragg reflection
carrier mobility
electrical properties
gallium antimonides
gallium arsenides
mirrors
molecular beam epitaxy