Epitaxial ternary RexMo1-xSi2 thin films on Si(100)
Date
1994
Authors
Vantomme, André, author
Long, Robert G., author
Nicolet, Marc-A., author
Mahan, John E., author
American Institute of Physics, publisher
Journal Title
Journal ISSN
Volume Title
Abstract
Reactive deposition epitaxy was used to synthesize thin layers of RexMo1-xSi2 on Si(100). In the case of x>=1, ReSi2 layers of excellent crystalline quality have been reported previously [J.E. Mahan, K. M. Geib, G. Y. Robinson, R. G. Long, Y. Xinghua, G. Bai, and M.-A. Nicolet, Appl. Phys. Lett. 56, 2439 (1990)]. In the case of x=0, however, virtually no alignment of theMoSi2 and the substrate is found, although this silicide is nearly isomorphic to ReSi2. For intermediate values of x, highly epitaxial ternary silicides are obtained, at least for a Mo fraction up to 1/3.