Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency
Date
1995
Authors
Geib, K. M., author
Kilcoyne, S. P., author
Schneider, R. P., author
Choquette, K. D., author
Lear, Kevin L., author
IEE, publisher
Journal Title
Journal ISSN
Volume Title
Abstract
Index-guided vertical cavity top-surface emitting laser diodes have been fabricated from an all epitaxial structure with conducting mirrors by selective lateral oxidation of AlGaAs. Low voltage, a 78% slope efficiency, and a 350μA threshold current in a single device combine to yield a maximum power conversion efficiency of 50% at less than a 2mA drive current. The device operates in a single mode up to 1.5mW.
Description
Rights Access
Subject
lasers
vertical cavity surface emitting lasers