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Vertical cavity lasers on p-doped substrates

Date

1997

Authors

OsiƄski, M., author
Furioli, J., author
Hammons, B. E., author
Banas, J. J., author
Hou, H. Q., author
Lear, Kevin L., author
IEE, publisher

Journal Title

Journal ISSN

Volume Title

Abstract

Vertical cavity surface emitting laser (VCSEL) diodes fabricated with inverted polarity, i.e. p-type bottom mirror and n type top mirror, are reported with lower resistance and diode voltage and comparable output characteristics relative to similar conventional, non-inverted structures.

Description

Rights Access

Subject

semiconductor junction lasers
vertical cavity surface emitting lasers

Citation

Associated Publications