Repository logo
 

Saturation intensity and time response of InGaAs-InGaP MQW optical modulators

Date

1995

Authors

Robinson, G. Y., author
Vogt, T. J., author
Lile, D. L., author
Kim, J.-W., author
Rocca, Jorge J., author
Chilla, J. L. A., author
Watson, M. E., author
IEEE, publisher

Journal Title

Journal ISSN

Volume Title

Abstract

We report modulation saturation and time response measurements on InGaAs-InGaP MQW modulators. The measurements yield a saturation intensity of (3.7 ± 0.1) kW/cm2 for a 0-10 V swing and switching times between 10 and 90 ns, depending on the bias voltage and incident light intensity. The observed dependence indicates that field screening due to carrier build-up is the dominant physical mechanism determining both the speed and the saturation intensity. This conclusion is supported by results of theoretical calculations.

Description

Rights Access

Subject

Citation

Associated Publications