Conformal step coverage of electron beam-assisted CVD of SiO2 and Si3N4 films

Collins, G. J., author; Emery, K., author; Rocca, Jorge J., author; Bishop, D., author; Gobis, L., author; Thompson, L. R., author; ECS - The Electrochemical Society, publisher

Conformal step coverage of electron beam-assisted CVD of SiO2 and Si3N4 films

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1984

Authors

Collins, G. J., author

Emery, K., author

Rocca, Jorge J., author

Bishop, D., author

Gobis, L., author

Thompson, L. R., author

ECS - The Electrochemical Society, publisher

Abstract

We have recently reported electron beam assisted chemical vapor deposition (CVD) of silicon dioxide (SiO2) and silicon nitride(Si3N4) films at low (200°C) substrate temperatures(1,2,3). Herein, we examine the ability of the electron beam deposition technique to conformally cover patterned aluminum and polysilicon steps.

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http://hdl.handle.net/10217/67450

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Conformal step coverage of electron beam-assisted CVD of SiO2 and Si3N4 films

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