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dc.contributor.authorNg, H. M.
dc.contributor.authorMenoni, Carmen S.
dc.contributor.authorPatel, Dineshchandra
dc.contributor.authorVaschenko, Georgiy O.
dc.contributor.authorCho, A. Y.
dc.date2002
dc.date.accessioned2007-01-03T07:27:53Z
dc.date.available2007-01-03T07:27:53Z
dc.identifier.citationVaschenko, G., et al., Nonlinear Macroscopic Polarization in GaN/AlxGa1-xN Quantum Wells, Applied Physics Letters 80, no. 22 (June 2002): 4211-4213.
dc.identifier.urihttp://hdl.handle.net/10217/633
dc.descriptionIncludes bibliographical references (p. 4213)
dc.description.abstractWe present experimental evidence of the nonlinear behavior of the macroscopic polarization in GaN/AlxGa1-xN quantum wells. This behavior is revealed by determining the barrier-well polarization difference as a function of applied hydrostatic pressure. The polarization difference and corresponding built-in electric field in the wells increase with applied pressure at a much higher rate than expected from the linear model of polarization. This result, universally observed in the quantum well structures with different AlN mole fraction in the barriers, is explained by the nonlinear dependence of the piezoelectric polarization in GaN and AlN on the strain generated by pressure.
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado State University. Libraries
dc.rights©2002 American Institute of Physics
dc.subjectgallium compounds
dc.subjectIII-V semiconductors
dc.subjectwide band gap semiconductors
dc.subjectaluminium compounds
dc.subjectsemiconductor quantum wells
dc.subjectpiezoelectric semiconductors
dc.subjectdielectric polarisation
dc.subjecthigh-pressure effects
dc.titleNonlinear macroscopic polarization in GaN/AlxGa1-xN quantum wells
dc.typeArticle
dc.publisher.originalAmerican Institute of Physics


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